(China (Mainland))
Product Summary
SST39LF020-45-4C-WHE is 64K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF020-45-4C-WHE device write (Program or Erase) with a 3.0-3.6V power supply and conforms to JEDEC standard pinouts for x8 memories.
Parametrics
SST39LF020-45-4C-WHE absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential:-0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃) :1.0W; (7)Surface Mount Solder Reflow Temperature1: 260℃ for 10 seconds.
Features
SST39LF020-45-4C-WHE features: (1)Single Voltage Read and Write Operations; (2)Superior Reliability; (3)Low Power Consumption (typical values at 14 MHz); (4)Sector-Erase Capability; (5)Fast Read Access Time; (6)Latched Address and Data; (7)Fast Erase and Byte-Program; (8)Automatic Write Timing; (9)End-of-Write Detection; (10)CMOS I/O Compatibility; (11)JEDEC Standard; (12)All non-Pb (lead-free) devices are RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SST39LF020-45-4C-WHE |
Microchip Technology |
Flash 256K X 8 45ns |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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