Product Summary
The 2SD2703 is a Transistor for General purpose amplification.
Parametrics
2SD2703 absolute maximum ratings: (1)Collector to base voltage, VCBO: 30V; (2)Collector to emitter voltage: 30V; (3)Emitter to base voltage, VEBO: 6V; (4)Peak collector current, ICP: 1A; (5)Collector current, IC:2A; (6)Collector power dissipation: 0.4W; (7)Junction temperature: 150℃; (8)Storage temperature: –55 to +150℃.
Features
2SD2703 features: (1)A collector current is large; (2)Collector saturation voltage is low; (3)VCE(sat) ≦ 350mV At IC = 500mA / IB = 25mA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2SD2703TL |
ROHM Semiconductor |
Transistors Bipolar (BJT) 30V 1A NPN LOW |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2SD200 |
Other |
Data Sheet |
Negotiable |
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2SD2000 |
Other |
Data Sheet |
Negotiable |
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2SD20000P |
TRANS NPN LF 60VCEO 4A TO-220F |
Data Sheet |
Negotiable |
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2SD201 |
Other |
Data Sheet |
Negotiable |
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2SD2012 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Silcon Pwr Trans |
Data Sheet |
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2SD2012(F,M) |
Toshiba |
Transistors Bipolar (BJT) NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App |
Data Sheet |
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