Product Summary
The BAS21 E6327 is a Silicon Switching Diode.
Parametrics
BAS21 E6327 absolute maximum ratings: (1)Diode reverse voltage VR: 200 V; (2)Peak reverse voltage VRM: 250; (3)Forward current IF: 250 mA; (4)Peak forward current IFM: 625; (5)Surge forward current, t = 10 μs IFS: 4 A; (6)Total power dissipation: 350mW; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature Tstg: -65 to 150℃.
Features
BAS21 E6327 features: (1)For high-speed switching applications; (2)High breakdown voltage.
Diagrams
BAS20 |
Taiwan Semiconductor |
Diodes (General Purpose, Power, Switching) Switching diode 250 mW |
Data Sheet |
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BAS20 /T3 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
Negotiable |
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BAS20 T/R |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
Negotiable |
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BAS20,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
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BAS20,235 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
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BAS20_Q |
Fairchild Semiconductor |
Rectifiers 200V 200mA |
Data Sheet |
Negotiable |
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