Product Summary

The G40N60 is an Insulated Gate Bipolar Transistor. It provides low conduction and switching losses. The G40N60 is designed for applications such as motor control and general inverters where high speed switching is a required feature. The applications of the G40N60 are AC & DC motor controls, general purpose inverters, robotics, and servo controls.

Parametrics

G40N60 absolute maximum ratings: (1)Collector-Emitter Voltage:600 V; (2)Gate-Emitter Voltage:± 20 V; (3)Collector Current @ TC = 25℃:40 A; (4)Collector Current @ TC = 100℃:20 A; (5)Pulsed Collector Current:160 A; (6)Diode Continuous Forward Current @ TC = 100℃:15 A; (7)Diode Maximum Forward Current:160 A; (8)Maximum Power Dissipation @ TC = 25℃:160 W; (9)Maximum Power Dissipation @ TC = 100℃:64 W; (10)Operating Junction Temperature:-55℃ to +150℃; (11)Storage Temperature Range:-55℃ to +150℃; (12)Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds:300℃.

Features

G40N60 features: (1)High speed switching; (2)Low saturation voltage: VCE(sat) = 2.3 V @ IC = 20A; (3)High input impedance; (4)CO-PAK, IGBT with FRD: trr = 50ns (typ.).

Diagrams

G40N60 block diagram