Product Summary
The ZXMN10A11GTA 100V N-channel enhancement mode MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The ZXMN10A11GTA is ideal for: (1)Motor control; (2)DC-DC Converters; (3)Power management functions; (4)Uninterrupted power supply.
Parametrics
ZXMN10A11GTA absolute maximum ratings: (1)Drain-Source voltage, VDSS: 100 V; (2)Gate-Source voltage, VGS: ±20 V; (3)Pulsed Drain current, VGS= 10V, IDM: 7.9 A; (4)Continuous Source current (Body diode), IS: 4.6 A; (5)Pulsed Source current (Body diode), ISM: 7.9 A.
Features
ZXMN10A11GTA features: (1)Fast switching speed; (2)Low gate drive; (3)Low input capacitance; (4)Qualified to AEC-Q101 Standards for High Reliability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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ZXMN10A11GTA |
Diodes Inc. |
MOSFET 100V N-Chnl UMOS |
Data Sheet |
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